Job Description
'-Memory architecture design (SRAM, DRAM, MRAM, RRAM, PCRAM and eFlash)
- Read and write critical path design and analysis
- Design of key building blocks (sensing, analog, high voltage, DFT)
- Chip-level design verification
- Embedded non-volatile memory compiler and productization
- Co-work with product/reliability engineer on silicon characterization and reliability qualification
Qualifications
'-The candidates should have at least bachelor degree in relevant field.
- Memory experts in the field of SRAM.
- Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff.
- Knowledge on high speed and low Vmin design is a plus.
- Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated.
- Good command of Japanese. English is a plus.
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, or disability.
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Yokohama, Kanagawa TSMC ￥900,000 - ￥1,200,000 per yearDesign memory architecture and read/write critical path design. Collaborate with product/reliability engineer on silicon characterization and reliability qualification. · Create key building blocks (sensing, analog, high voltage, DFT) · Embedded non-volatile memory compiler and p ...
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