Senior Engineer, DRAM CMOS Process Integration

6日前

Higashihiroshima Micron

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

JR40903 Senior Engineer, DRAM CMOS Process Integration

(English follows after Japanese)

TD advanced CMOS Device & Process Integration は、 Micronの DRAM やHBMテクノロジー のロードマップをサポートし、現在および将来の CMOS テクノロジーの開発に直接貢献する役割を担っています。 プロセスチーム、回路、設計、レイアウト、製品エンジニアリングおよびモデリング/TCAD チームと 緊密に連携して頂くことを期待しています 。 デバイスターゲットの設定と、ターゲットを達成するためのトランジスタ構造とプロセスおよびインテグレーション技術の構築に貢献して頂きます。

このポジションで成功するには 、標準的な CMOS トランジスタ物理の理解、先端CMOSデバイス(FinFET, Nanosheet, vertical Gate All Around)のプロセスインテグレーション、およびデバイスの知識があることが推奨されます。 解析およびデータ分析ツール、テストプログラムの設計、およびパラメトリックテストに通じているかたを歓迎します。チームの同僚やマネージャーとの協業を通じて、良い結果を達成できることを期待しています。 半導体デバイスの一般的な知識とプロセスインテグレーション・デバイス開発に関連する最先端の、開発エンジニアとして、優れたコミュニケーションスキルと分野横断的な能力を発揮することを期待しています。

期待される責務 ( 目安として )


• 開発ロードマップの作成、実行に貢献して頂きます


• パフォーマンスとコスト効率の両方で当社のデバイスポートフォリオの改善に貢献して頂きます


• 将来のデバイス開発のためのシリコンを用いた実験の計画、実行、結果の分析をして頂きます


• トランジスタモデルを検証し、必要な場合には修正・補正を実施して頂きます


• トランジスタ・デザインルールの検証、プロセスモニタ・電気テストの構築に従事して頂きます


• 経験の浅い同僚の指導、チームメンバーと協業を通じてチームスピリットを促進して頂きます

求められる資格 ( 目安として )


• 電気工学、半導体デバイス技術、または関連分野の修士号取得


• 日本語か英語能力、もしくはその両方


• 優れたプレゼンテーションスキル


• CMOSデバイス技術、FinFETプロセスインテグレーション・デバイス開発の業界経験のある方を歓迎します


• FinFET および GAA ロジック トランジスタ テクノロジの開発経験がある方を歓迎します


• DRAM 設計またはテストのスキルの開発の経験がある方を歓迎します

TD advancedCMOS Device & Process Integration directly contributes to the development of current and future CMOS technology in support of Micron's DRAMand HBM Technology & Roadmap. You will be responsible for device & process integration & development to establish advanced CMOS device technology and bring it to high volume manufacturing level. In this capacity, you will interface closelynot only with the Process Development team but alsowith Circuit, Design, Layout, Product Engineering & Modeling/TCAD teams. You will collaborate setting electrical targets and define transistor structures and process technology to meet the targets.

To be successful in this position, a strong background in standard CMOS Transistor Physics, and other CMOS devices (FinFET, Nanosheets, vertical Gate All Around) and device knowledge is highly recommended. We expect you to be proficient in analytics and data analysis tools, test structure design and parametric test definition, and be able to present your results clearly and concisely to your team peers and the management team.Good understanding and hands on experiencewith advanced logic device technologies (16nm and beyond) in terms of silicon processing steps and process integration is also highly recommended. As a development engineer, you will exercise outstanding communication skills and the capability of interdisciplinary work.

Responsibilities include, but not limited to:

  • Together with your peers, you will engage to craft, align, and implement our roadmap
  • You give support to improve our device portfolio, both in performance and cost efficiency
  • You define, act on and analyze silicon experiments for future device generations
  • You validate transistor models and conduct corrective actions as needed
  • You are dedicated to defining electrical test structures for transistors, isolation, design rule verification, and process monitoring
  • You foster and enable a collaborative working style and team spirit.

    • Minimum Qualifications:

  • MS in Electrical Engineering, Semiconductor Device Technology or related field
  • Preferred: proven experience in the field of CMOS device technology & process integration & device knowledge
  • Bonus: Experience in developing FinFET, nano sheet & vertical GAA logic transistor technologies
  • Developing DRAM Design or Test skills
  • Good presentation skills

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